Photonic Crystal/Nano-Electronic Device Structures for Large Array Thermal Imaging
Abstract
Lattice-matched InGaAs/Inp quantum well infrared detector (QWIP) exhibits high photoconductive gain but un-adjustable detection wavelength because of its fixed barrier height. The use of InxGa1-xAsyP1-y (InGaAsP) as the barrier material is superior to that of InP with regard to the flexibility of operating wavelength. In this letter we investigate the application of InGaAsP material in the long wavelength infrared detection. We report a broadband quantum well InGaAs/InGaAsP detector covering 8-14 m. The excellent agreement between the observed responsivity spectrum and the calculated one is achieved indicating the validness of our design model. In order to determine the usefulness of InGaAsP in long-wavelength detection, we also design a GaAs/AlGaAs quantum well detector with similar spectrum and compare its performance with that of the InGaAs/InGaAsP detector. The dark current noise measurement indicates that the gain in InGaAsP is 4.6 times larger than that of AlGaAs, showing that InGaAsP is a good candidate for long-wavelength high-speed infrared detection.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 19, 2007
- Accession Number
- ADA482374
Entities
People
- Daniel C. Tsui
Organizations
- Princeton University