Development of Gate and Base Drive Using SiC Junction Field Effect Transistors

Abstract

A base drive and a gate drive were designed with 4H-SiC junction field effect transistors (JFET) and worked. Developmental JFET had uneven distribution of performance parameters. For example, the gate current (Ig) and voltage (Vgs) of each JFET required precise, customized control. This initial investigation designed and tested two JFETs into a base drive circuit board for an npn SiC bipolar junction transistor (BJT). The circuit rapidly drove a SiC BJT on and off with 4H-SiC semiconductor devices to perform to 150 C. For the gate of an n-MOS or insulated gate bipolar transistor (IGBT) two other JFETs were designed into a drive circuit which worked. For these JFETs Id - Vds curves and reliability degraded moderately with use.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
May 01, 2008
Accession Number
ADA482384

Entities

People

  • Timothy E. Griffin

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Circuit Boards
  • Dead Time
  • Electronics Laboratories
  • Field Effect Transistors
  • High Temperature
  • P-N Junctions
  • Power Supplies
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Transistors

Fields of Study

  • Engineering

Readers

  • Electrical Engineering
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics