Cross-Sectional Scanning Tunneling Microscopy of Mn-Doped GaAs: Theory and Experiment

Abstract

We report first-principles calculations of the energetics and simulated scanning tunneling microscopy (STM) images for Mn dopants near the GaAs (110) surface, and compare the results with cross-sectional STM images. The Mn configurations considered here include substitutionals, interstitials, and complexes of substitutionals and interstitials in the first three layers near the surface. Based on detailed comparisons of the simulated and experimental images, we identify three types of Mn configurations imaged at the surface: (1) single Mn substitutionals, (2) pairs of Mn substitutionals, and (3) complexes of Mn substitutionals and interstitials.

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Document Details

Document Type
Technical Report
Publication Date
Dec 23, 2003
Accession Number
ADA482464

Entities

People

  • A. T. Hanbicki
  • Berend T Jonker
  • G. I. Boishin
  • J. M. Sullivan
  • Lloyd J. Whitman
  • S. C. Erwin

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Base Pressure
  • Bulk Materials
  • Curie Temperature
  • Energy
  • Experimental Data
  • Fermi Levels
  • First Principles Calculations
  • High Energy
  • High Resolution
  • Intensity
  • Materials
  • Measurement
  • Microscopy
  • Quantum Tunneling
  • Scanning
  • Shape
  • Tunneling

Fields of Study

  • Physics

Readers

  • Aerospace Propulsion Engineering.
  • Astronomy and Astrophysics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.