Optical Characterization of Lateral Epitaxial Overgrown GaN Layers
Abstract
The optical properties of homoepitaxial GaN layers deposited by organometallic vapor phase epitaxy on stripe-patterned GaN films on 6H-SiC substrates have been investigated. Analysis of the spatially resolved Raman scattering spectra indicate an improvement in material quality of the overgrown region. Room-temperature color cathodoluminescence imaging and low-temperature photoluminescence measurements indicate that a donor and an acceptor, different from those detected in the underlying GaN/AlN/SiC substrate, have been incorporated in the epitaxial layer. Detailed photoluminescence studies of the near band-edge emission strongly suggest that Si is the additional donor detected in the homoepitaxial GaN layer. Its occurrence, along with that of an acceptor-related defect which is primarily found in the laterally overgrown region, is discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1998
- Accession Number
- ADA482475
Entities
People
- Gennadi V. Saparin
- Jaime A. Freitas Jr.
- Ok-hyun Nam
- Robert F Davis
- Sergey K. Obyden
Organizations
- United States Naval Research Laboratory