Monolithic Integration of Resonant Interband Tunneling Diodes and High Electron Mobility Transistors in the InAs/GaSb/AlSb Material System

Abstract

InAs/AlSb high electron mobility transistors (HEMTs) and resonant interband tunneling diodes (RITD) with AlSb barriers and GaSb wells were grown in a single heterostructure by molecular beam epitaxy. The resulting HEMTs exhibit excellent dc and microwave performance at low drain voltages with an intrinsic unity-current-gain cutoff frequency of 220 GHz. The RITD performance is comparable to RITDs grown directly on InAs substrates, with peak current densities above 10(exp 4) A/sq cm and peak-to-valley ratios near 11 for 15 Angstrom AlSb barriers. The results represent an important step toward the fabrication of high-speed, low-power logic circuits in this material system.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2000
Accession Number
ADA482490

Entities

People

  • Allan S. Bracker
  • Brian R. Bennett
  • Doewon Park
  • R. Bass
  • Richard Magno
  • Ronaldd D. Schrimpf

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Conduction Bands
  • Diodes
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Field Effect Transistors
  • High Electron Mobility Transistors
  • Logic Gates
  • Materials
  • Mobility
  • Quantum Tunneling
  • Quantum Wells
  • Resonant Tunneling Diodes
  • Transistors
  • Tunnel Diodes

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics