Photoionisation Spectroscopy of Traps in AlGaN/GaN High Electron Mobility Transistors Grown by Molecular Beam Epitaxy
Abstract
Photoionization spectroscopy has been carried out in bias-stressed AlGaN=GaN high electron mobility transistors (HEMTs) grown by Molecular Beam Epitaxy (MBE) to probe the nature of the deep trapping centers responsible for stress-induced current collapse in these devices. The results indicate that a GaN buffer layer trap previously associated with current collapse in devices grown by Metal Organic Chemical Vapor Deposition (MOCVD) is responsible for induced collapse in MBE-grown structures.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 04, 2003
- Accession Number
- ADA482491
Entities
People
- D. Scott Katzer
- David F. Storm
- J. A. Mittereder
- J. A. Roussos
- P. B. Klein
- S. C. Binari
Organizations
- United States Naval Research Laboratory