Observation of Deep Traps Responsible for Current Collapse in GaN Metal-Semiconductor Field-Effect Transistors

Abstract

Deep traps responsible for current collapse phenomena in GaN metal semiconductor field-effect transistors have been detected using a spectroscopic technique that employs the optical reversibility of current collapse to determine the photoionization spectra of the traps involved. In the n-channel device investigated, the two electron traps observed were found to be very deep and strongly coupled to the lattice. Photoionization thresholds for these traps were determined at 1.8 and at 2.85 eV. Both also appear to be the same traps recently associated with persistent photoconductivity effects in GaN.

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Document Details

Document Type
Technical Report
Publication Date
Dec 20, 1999
Accession Number
ADA482492

Entities

People

  • A. E. Wickenden
  • J. A. Freitas Jr.
  • P. B. Klein
  • S. C. Binari

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Collapse
  • Compound Semiconductors
  • Electronics Laboratories
  • Electrons
  • Energy Bands
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • High Voltage
  • Illumination
  • Light Emitting Diodes
  • Materials
  • Measurement
  • Metal Oxide Semiconductors
  • Photoionization
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Pulsed Power and Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics