Resonant Interband Tunnel Diodes with AlGaSb Barriers

Abstract

The peak current density of InAs/AlSb/GaSb/AlSb/InAs resonant interband tunneling diodes (RITDs) has been enhanced by replacing the AlSb barriers with Al(1-x)Ga(x)Sb that has a narrower band gap. The devices were grown by molecular beam epitaxy and tested at room temperature. Diodes with nominally identical 7-ML-thick ternary alloy barriers with x=0.35 are found to have peak current densities three times larger than those with AlSb barriers. The peak-to-valley current ratio decreases by only one third from 18 for the AlSb diodes to 12 for diodes with the ternary alloy barriers.

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Document Details

Document Type
Technical Report
Publication Date
May 15, 2001
Accession Number
ADA482494

Entities

People

  • Allan S. Bracker
  • Brian R. Bennett
  • Richard Magno

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Band Structures
  • Conduction Bands
  • Current Density
  • Diodes
  • Electrons
  • Energy Bands
  • Materials
  • Metal-Semiconductor Junctions
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Tunneling
  • Thickness
  • Tunnel Diodes
  • Tunneling
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology