Photoluminescence of InAs(1-x)Sb(x)/AlSb Single Quantum Wells: Transition from Type-II to Type-I Band Alignment

Abstract

Infrared photoluminescence has been used to study the band-gap energy of InAs(1-x)Sb(x) digital superlattices and the band alignment of InAs(1-x)Sb(x)/AlSb quantum wells at 5 K. It is found that the InAs(1-x)Sb(x) digital alloys have a smaller effective band gap than InAs(1-x)Sb(x) random alloys. In addition, the valence band offset between type-II InAs/AlSb is determined to be 130 meV. This number reduces as the Sb mole fraction in InAs(1-x)Sb(x) is increased, and the alignment between InAs(1-x)Sb(x)/AlSb becomes type I when x > 0.15.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2000
Accession Number
ADA482496

Entities

People

  • Brian R. Bennett
  • Henry Yang
  • M. Fatemi
  • M. J. Yang
  • P. J. Lin-chung
  • W. J. Moore

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Conduction Bands
  • Crystal Lattices
  • Diffraction
  • Electron Mobility
  • Electrons
  • Energy Bands
  • Films
  • High Electron Mobility Transistors
  • Materials
  • Photoluminescence
  • Quantum Wells
  • Semiconductors
  • Transitions
  • Valence Bands
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Quantum Computing