Transport Properties of Be- and Si-Doped AlSb

Abstract

Thick epitaxial layers of AlSb(Si) and AlSb(Be) were grown by molecular beam epitaxy and characterized by variable-temperature Hall/van der Pauw measurements. Si is shown to be predominantly an acceptor in AlSb, with an energy level 33 +/- 4 meV above the top of the valence band. Be is also an acceptor, with an energy level 38 +/- 4 meV above the top of the valence band. Be is a robust doping source for p-AlSb for carrier densities ranging from 10(exp 15) to 10(exp 19) /cu cm. Background impurity levels in AlSb can be assessed by measuring the transport properties of lightly doped AlSb(Be) layers.

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Document Details

Document Type
Technical Report
Publication Date
Jun 01, 2000
Accession Number
ADA482497

Entities

People

  • Benjamin V. Shanabrook
  • Brian R. Bennett
  • M. J. Yang
  • W. J. Moore

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Electron Mobility
  • Electronics
  • Electrons
  • Energy Bands
  • Energy Levels
  • Films
  • Materials
  • Military Research
  • Mobility
  • Quantum Wells
  • Semiconductors
  • Thick Films
  • Thin Films
  • Transport Properties
  • Transport Ships
  • Valence Bands

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology