The Structure of Si(112):Ga-(N x 1) Reconstructions

Abstract

We have studied the structure of Si(112):Ga-(N*1) reconstructions using atomic-resolution scanning tunneling microscopy and first-principles calculations. The nanofaceted clean Si(112) surface becomes planar following the adsorption of Ga, which forms long chains on the surface interrupted by isolated quasi-periodic defects. The defects create a mixture of (N*1) structures (N~4-7) with 5 1 and 6 1 unit cells most common. We demonstrate that this structure consists of a chain of Ga atoms adsorbed at the (111)-like step edge within the (112) unit cell, and that the defects are Ga vacancies where the exposed step edge Si atoms form a dimer bond. Calculations performed as a function of vacancy period confirm that the surface energy is minimized at N=5-6, when compressive strain associated with the Si-Ga bonds is effectively minimized.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1999
Accession Number
ADA482500

Entities

People

  • A. A. Baski
  • Lloyd J. Whitman
  • S. C. Erwin

Organizations

  • Virginia Commonwealth University

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Adsorption
  • Atoms
  • Auger Electrons
  • Diffraction
  • Electron Diffraction
  • Energy
  • First Principles Calculations
  • Gray Scale
  • Ground State
  • Microscopy
  • Military Research
  • Orientation (Direction)
  • Quantum Tunneling
  • Scanning
  • Self Assembly
  • Surface Energy
  • Tunneling

Readers

  • Electromagnetic Wave Scattering and Antenna Radiation Engineering
  • Powder metallurgy of Titanium alloys.
  • Quantum spin resonance or Electron Paramagnetic Resonance spectroscopy.