Hydrogen Termination Following Cu Deposition on Si(001)

Abstract

We describe the surface structures following submonolayer Cu deposition on Si(001) and subsequent hydrogen termination as characterized by scanning tunneling microscopy. Cu adsorption at 870 K results in a characteristic (2*8) island+vacancy structure, as previously reported. In addition, occasional structures are observed attributed to Cu in surface interstitial sites. After H termination, the dominant features of the island+vacancy structure remain, but the size and distribution of the structures are significantly altered. Based on the atomic-scale appearance of both the clean and H-terminated structures, we propose that within the (2*8) island+vacancy structure all surface atoms are Si, with all Cu subsurface, contrary to previous structural models.

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Document Details

Document Type
Technical Report
Publication Date
Apr 08, 2005
Accession Number
ADA482514

Entities

People

  • A. R. Laracuente
  • L. A. Baker
  • Lloyd J. Whitman

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Chemistry
  • Elements
  • First Principles Calculations
  • Gray Scale
  • High Resolution
  • Hydrogen
  • Information Operations
  • Integrated Circuits
  • Materials Science
  • Metals
  • Military Research
  • Phase
  • Phase Diagrams
  • Surface Chemistry
  • Surface Energy
  • Transition Metals

Readers

  • Thin Film Deposition Science.