Surface Morphology of Homoepitaxial GaSb Films Grown on Flat and Vicinal Substrates

Abstract

We have compared the surface morphology of GaSb homoepitaxial films grown on both flat and 1 deg vicinal [miscut towards (1 1 1)A] (0 0 1) substrates using atomic force microscopy and scanning tunneling microscopy. Mound formation is observed for GaSb homoepitaxy on the flat substrates over a range of growth temperatures when either Sb2 or Sb4 is used to supply the group V flux. At sufficiently high growth temperatures, which are different depending on whether Sb2 or Sb4 is used, the mounds transform into fairly well-defined pyramids comprised of distinctly stacked layers that are clearly separated by monolayer-height steps.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 2001
Accession Number
ADA482755

Entities

People

  • B. Z. Nosho
  • Brian R. Bennett
  • E. H. Aifer
  • M. Goldenberg

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Critical Temperature
  • Crystal Growth
  • Crystal Lattices
  • Crystals
  • Epitaxial Growth
  • Films
  • Glass Transition Temperature
  • Military Research
  • Molecular Beam Epitaxy
  • Phase Transformations
  • Roughness
  • Semiconductors
  • Substrates
  • Surface Roughness
  • Three Dimensional
  • Transition Temperature
  • Transitions

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Thin Film Deposition Science.