Photoionization Spectroscopy of Traps in GaN Metal-Semiconductor Field-Effect Transistors
Abstract
Measurements of the spectral and intensity dependences of the optically-induced reversal of current collapse in a GaN metal-semiconductor field-effect transistor (MESFET) have been compared to calculated results. The model assumes a net transfer of charge from the conducting channel to trapping states in the high-resistivity region of the device. The reversal, a light-induced increase in the trap-limited drain current, results from the photoionization of trapped carriers and their return to the channel under the influence of the built-in electric field associated with the trapped charge distribution. For a MESFET in which two distinct trapping centers have been spectrally resolved, the experimentally measured dependence upon light intensity was fitted using this model.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 2000
- Accession Number
- ADA482757
Entities
People
- A. E. Wickenden
- J. A. Freitas Jr.
- P. B. Klein
- S. C. Binari
Organizations
- United States Naval Research Laboratory