Frenkel-Kontorova Model of Vacancy-Line Interactions on Ga/Si(112)
Abstract
We develop an exactly solvable microscopic model for analyzing the strain-mediated interaction of vacancy lines in a pseudomorphic adsorbate system. The model is applied to Ga/Si(112) by extracting values for the microscopic parameters from total-energy calculations. The results, which are in good agreement with experimental observations, reveal an unexpectedly complex interplay between compressive and tensile strain within the mixed Ga-Si surface layer.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 30, 1999
- Accession Number
- ADA482844
Entities
People
- A. A. Baski
- Lloyd J. Whitman
- R. E. Rudd
- S. C. Erwin
Organizations
- United States Naval Research Laboratory