Structure of Ge(113): Origin and Stability of Surface Self-Interstitials

Abstract

Using atomic-resolution scanning tunneling microscopy and first-principles calculations we show that Ge and Si(113) are structurally similar, contrary to previous reports. Both surfaces have (3 x 2) and (3 x 1) reconstructions stabilized by surface self-interstitials, with the (3 x 2) lower in energy on Si but degenerate with the (3 x 1) on Ge. Statistical analysis of fluctuations observed between the two structures on Ge, combined with calculations for bulk interstitials, indicate that the surface (not the bulk) is the likely source and sink of the surface self-interstitials for both materials.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1998
Accession Number
ADA482881

Entities

People

  • A. Laracuente
  • Lloyd J. Whitman
  • S. C. Erwin

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Buckling
  • Diffusion
  • Energy
  • Energy Bands
  • First Principles Calculations
  • High Resolution
  • High Temperature
  • Low Temperature
  • Migration
  • Military Research
  • Phase Transformations
  • Statistical Analysis
  • Surface Energy
  • Surface Roughness
  • Tetramers
  • Transitions
  • X-Ray Diffraction

Fields of Study

  • Physics

Readers

  • Calculus or Mathematical Analysis
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.