Ga-Induced Restructuring of Si(112) and Si(337)

Abstract

The adsorption of gallium on Si(112)) and Si(337) has been studied with scanning tunneling microscopy. When clean, these two high-index surfaces are unstable and facet to other orientations: (112) to (111)- and (337)-like nanofacets, and (337) to the stable (5 5 12) plane. When Ga is adsorbed onto each of these surfaces and annealed, the top surface layers undergo substantial rearrangements, exposing Ga-reconstructed (112) planes in both cases.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1996
Accession Number
ADA482883

Entities

People

  • A. A. Baski
  • Lloyd J. Whitman

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Abstracts
  • Adsorbates
  • Adsorption
  • Auger Electron Spectroscopy
  • Auger Electrons
  • Crystal Lattices
  • Diffraction
  • Electron Diffraction
  • Electron Spectroscopy
  • Electronic States
  • Information Operations
  • Military Research
  • Orientation (Direction)
  • Semiconductors
  • Spectroscopy
  • Ultrahigh Vacuum
  • Vacuum

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene