Nucleation and Growth of Fe on GaAs(001)-(2x4) Studied by Scanning Tunneling Microscopy

Abstract

The nucleation and growth of Fe on GaAs(001)-(2x4) has been studied in situ with scanning tunneling microscopy. The growth is dominated by the structure of the substrate reconstruction. Fe initially forms stable six- to eight-atom two-dimensional islands confined to the first-layer As-dimer rows. The islands preferentially coalesce along the rows, leading to an anisotropic film morphology that persists for at least the first 50 angstrom of growth. These results provide insight into the growth mode of Fe on GaAs surfaces and have implications for the magnetic properties of ultrathin Fe films.

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Document Details

Document Type
Technical Report
Publication Date
Apr 15, 1996
Accession Number
ADA482930

Entities

People

  • Benjamin V. Shanabrook
  • Berend T Jonker
  • Brian R. Bennett
  • E. Kneedler
  • Lloyd J. Whitman
  • P. M. Thibado

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Adsorption
  • Anisotropy
  • Crystal Structure
  • Films
  • Gray Scale
  • Magnetic Properties
  • Metal Films
  • Microscopy
  • Military Research
  • Nucleation
  • Optical Properties
  • Quantum Tunneling
  • Scanning
  • Semiconductors
  • Three Dimensional
  • Tunneling
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Thin Film Deposition Science.