A Monohydride High-Index Silicon Surface: Si(114):H-(2x1)

Abstract

We describe the adsorption of H on Si(114)-(2x1) as characterized by scanning tunneling microscopy and first-principles calculations. Like Si(001)-and despite the relative complexity of the (114) structure-a well-ordered, low-defect-density monohydride surface forms at approx. 400 deg. C. Surprisingly, the clean surface reconstruction is essentially maintained on the (2 x 1) monohydride surface, composed of dimers, rebonded double-layer steps, and nonrebonded double-layer steps, with each surface atom terminated by a single H. This H-passivated surface can also be easily and uniformly patterned by selectively desorbing the H with low-voltage electrons.

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Document Details

Document Type
Technical Report
Publication Date
Mar 08, 1999
Accession Number
ADA482937

Entities

People

  • A. Laracuente
  • Lloyd J. Whitman
  • S. C. Erwin

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Adsorption
  • Charge Transfer
  • Chemistry
  • Density Functional Theory
  • Electron Beam Lithography
  • Electron Beams
  • Electrons
  • Energy
  • First Principles Calculations
  • High Temperature
  • Low Temperature
  • Low Voltage
  • Military Research
  • Substrates
  • Surface Chemistry
  • Surface Energy
  • Surface Temperature

Readers

  • Nanofabrication and Microfabrication.
  • Quantum Chemistry
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene