Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers

Abstract

We have determined the structure of AlSb and GaSb (001) surfaces prepared by molecular beam epitaxy under typical Sb-rich device growth conditions. Within the range of flux and temperature where the diffraction pattern is nominally (1 x 3), we find that there are actually three distinct, stable (4 x 3) surface reconstructions. The three structures differ from any previously proposed for these growth conditions, with two of the reconstructions incorporating mixed III-V dimers within the Sb surface layer. These heterodimers appear to play an important role in island nucleation and growth.

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Document Details

Document Type
Technical Report
Publication Date
May 15, 2000
Accession Number
ADA482938

Entities

People

  • Allan S. Bracker
  • B. Z. Nosho
  • Benjamin V. Shanabrook
  • E. Kaxiras
  • Hanchul Kim
  • James C. Culbertson
  • Lloyd J. Whitman
  • N. A. Modine
  • W. Barvosa-carter

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms
  • C4I

DTIC Thesaurus Topics

  • Atoms
  • Band Structures
  • Diffraction
  • Electron Diffraction
  • Electron Transfer
  • Electrons
  • Energy
  • Epitaxial Growth
  • Films
  • Materials
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Phase Transformations
  • Surface Energy
  • Transition Temperature
  • Transitions

Readers

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