Optically Detected Magnetic Resonance of (Effective-Mass) Shallow Acceptors in Si-Doped GaN Homoepitaxial Layers
Abstract
Optically detected magnetic resonance (ODMR) has been performed on Si-doped GaN homoepitaxial layers grown by organometallic chemical vapor deposition on free-standing GaN templates. In addition to intense excitonic bandedge emission with narrow linewidths (<0.4 meV), these films exhibit strong shallow donor shallow acceptor recombination at 3.27 eV. Most notably, ODMR on this photoluminescence band reveals a highly anisotropic resonance with g(sub parallel) = 2.193 +/-0.001 and g(sub perpendicular) approx. 0 as expected for effective-mass shallow acceptors in wurtzitic GaN from k.p theory. This previously elusive result is attributed to the much reduced dislocation density and impurity levels compared to those typically found in the widely investigated Mg-doped GaN heteroepitaxial layers. The possible chemical origin of the shallow acceptors in these homoepitaxial films will be discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2003
- Accession Number
- ADA483100
Entities
People
- Benjamin V. Shanabrook
- D. D. Koleske
- Evan R. Glaser
- J. A. Freitas Jr.
- Jinchi Han
- S. K. Lee
- S. S. Park
Organizations
- United States Naval Research Laboratory