Molecular Beam Epitaxy Growth and Characterization of Mid-IR Type-II "W" Diode Lasers

Abstract

Type II 'W' diodes designed for emission at the spectral line of methane (3.31 micrometer) when operated near 80 K were grown on a compact 2IT RIBER molecular beam epitaxy system. Photoluminescence and cross-sectional scanning tunneling microscopy were used as tools to improve the growth quality of these structures. The diodes exhibited very low housing thresholds at T=80 K (24-40 A/cm(2)), although further development will be required to enhance the characteristic temperature (T(o) approx. 40 K) and the maximum operating temperature (approx. 190 K). The lasers had favorable internal losses at all T up to 190 K (approx. 7 cm(-1), and favorable internal efficiencies at low T (up to 85%). The I-V characteristics of nonlasing test structures were improved substantially by adding n-side 'transition' regions that smoothed out abrupt steps in the conduction-band offset.

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Document Details

Document Type
Technical Report
Publication Date
Jun 07, 2005
Accession Number
ADA483125

Entities

People

  • C. L. Canedy
  • Chul Soo Kim
  • G. I. Boishin
  • I. Vurgaftman
  • J. R. Meyer
  • Lloyd J. Whitman
  • Min Suk Kim
  • W. W. Bewley

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Atoms
  • Conduction Bands
  • Efficiency
  • Energy Bands
  • Energy Gaps
  • Energy Levels
  • Epitaxial Growth
  • Laser Diodes
  • Lasers
  • Measurement
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Quantum Efficiency
  • Spectra
  • Spectral Lines
  • Transitions

Fields of Study

  • Materials science
  • Physics

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers