Fabrication of a Lateral Polarity GaN MESFET: An Exploratory Study

Abstract

This report describes exploratory studies in the fabrication of the GaN LPH structures and their application in the fabrication of a depletion-mode metal semiconductor field effect transistors (MESFETs). Exploiting LPH growth technology, and the difference in the electronic properties of the different type of domains, i.e. as grown N-polar domains are conductive and Ga-polar domains are insulating, laterally selective doped areas can be realized for improving contact resistance to the conduction channel in GaN MESFETs. Basically, the N-polar domains act as the ohmic contacts to the channel that is localized in a Ga-polar domain.

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Document Details

Document Type
Technical Report
Publication Date
Jun 27, 2007
Accession Number
ADA483352

Entities

People

  • Ramón Collazo
  • Zlatko Sitar

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Diffraction
  • Electrical Properties
  • Electron Microscopy
  • Fabrication
  • Field Effect Transistors
  • Geometry
  • Lithography
  • Mass Transfer
  • Materials
  • Measurement
  • Metal-Semiconductor Junctions
  • Microscopes
  • Microscopy
  • Photolithography
  • Polar Regions
  • Polarity
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene