Femtosecond Laser Passivation of GaAs Detector Material
Abstract
As devices become physically thinner, the surface to volume ratio becomes larger, so the control of surface properties becomes increasingly important. The device surface needs to be passivated in order to reduce electronically active surface states that cause noise. This seedling grant studies a new approach to passivating surfaces and has great Air Force relevance due to its importance in making smaller electronic devices. The objective is to explore the potential of using novel femtosecond laser techniques to passivate device surfaces. The approach is to perform noise spectral density measurements and selected materials structure measurements on GaAs detector materials, with and without passivation layers, both before and after femtosecond laser irradiation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 07, 2008
- Accession Number
- ADA483404
Entities
People
- Glenn Boreman
- Kathleen Richardson
- Martin Richardson
Organizations
- University of Central Florida