Fine Structure Splitting in the Optical Spectra of Single GaAs Quantum Dots
Abstract
We report a photoluminescence study of excitons localized by interface fluctations in a narrow GaAs/AlGaAs quantum well. This type of structure provides a valuable system for the optical study of quantum dots. By reducing the area of the sample studied down to the optical near-field regime, only a few dots are probed. With resonant excitation we measure the excited-state spectra of single quantum dots. Many of the spectral lines are linearly polarized with a fine structure splitting of 20-50 mueV. These optical properties are consistent with the characteristic asymmetry of the interface fluctuations.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 15, 1996
- Accession Number
- ADA483899
Entities
People
- Benjamin V. Shanabrook
- D. Gammon
- D. Scott Katzer
- Doewon Park
- E. S. Snow
Organizations
- United States Naval Research Laboratory