Engineered Heterostructures of 6.1 A III-V Semiconductors for Advanced Electronic and Optoelectronic Applications

Abstract

Heterostructures formed from III-V semiconductors with the 6.1 lattice spacing "InAs, GaSb, AlSb and related alloys" have attracted significant interest because of their potential to define a new `state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 -based devices that have the potential to revolutionize infrared optoelectronics and low-power high-speed electronics.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1999
Accession Number
ADA484408

Entities

People

  • Allan S. Bracker
  • Benjamin V. Shanabrook
  • Brian R. Bennett
  • Evan R. Glaser
  • James C. Culbertson
  • R. Bass
  • Ronaldd D. Schrimpf
  • W. Barvosa-carter
  • W. Kruppa
  • W. W. Bewley

Organizations

  • United States Naval Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Structures
  • Detectors
  • Electronics Laboratories
  • Energy Bands
  • Heterojunctions
  • High Electron Mobility Transistors
  • Infrared Detectors
  • Lasers
  • Logic Gates
  • Materials
  • Military Research
  • Optics
  • Optoelectronics
  • Power Electronics
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Directed Energy
  • Microelectronics
  • Space