Comparison of Solid-State Microwave Annealing with Conventional Furnace Annealing of Ion-Implanted SiC
Abstract
Rapid solid-state microwave annealing was performed for the first time on N+-, Al+-, and B+-implanted SiC, and the results were compared with the conventional furnace annealing. For microwave annealing, temperatures up to 2,000 deg C were attained with heating rates exceeding 600 deg C/s. An 1,850 deg C/35 s microwave anneal yielded a root-mean-square (RMS) surface roughness of 2 nm, which is lower than the 6 nm obtained for 1,500 deg C/15 min conventional furnace annealing. For the Al implants, a minimum room-temperature sheet resistance (Rs) of 7 kW/h was measured upon microwave annealing. For the microwave annealing, Rutherford backscattering (RBS) measurements indicated a better structural quality, and secondary-ion-mass-spectrometry (SIMS) boron implant depth profiles showed reduced boron redistribution compared to the corresponding results of the furnace annealing.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2007
- Accession Number
- ADA486332
Entities
People
- Albert V Davydov
- John A. Schreifels
- Kenneth A. Jones
- Mark C. Wood
- Mulpuri V. Rao
- Siddarth G. Sundaresan
- Yonglai Tian
Organizations
- George Mason University