Solid-State Microwave Annealing of Ion-Implanted 4H-SiC

Abstract

Solid-state microwave annealing was performed at temperatures up to 2120 deg C for 30 s on ion-implanted 4H SiC in N2 ambient. The surface roughness in the samples annealed without a surface cap at 1950 deg C is 2.65 nm for 10 micrometers x 10 micrometers atomic force microscopy scans. The sheet resistances measured on Al+- and P+-implanted 4H SiC, annealed by microwaves, are lower than the best conventional furnace annealing results reported in literature. X-ray diffraction spectra indicate alleviation of the lattice damage induced by the ion-implantation and also incorporation of most of the implanted species into substitutional lattice sites.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2007
Accession Number
ADA486333

Entities

People

  • Mark C. Ridgway
  • Mulpuri V. Rao
  • Nadeemullah A. Mahadik
  • S. B. Qadri
  • Siddarth G. Sundaresan
  • Yong-lai Tian

Organizations

  • George Mason University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Annealing
  • Carrier Mobility
  • Crystal Lattices
  • Diffraction
  • High Temperature
  • Ion Implantation
  • Materials
  • Microwaves
  • Military Research
  • Mobility
  • Radiation
  • Resistance
  • Scattering
  • Silicon Carbide
  • Surface Roughness
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology