Low Temperature Photoluminescence and Leakage Current Characteristics of InAs-GaSb Superlattice Photodiodes

Abstract

We report the results of a study of the temperature-dependent photoluminescence (PL) and leakage current characteristics of a set of type II idium arsenide (InAs)-gallium antimonide (GaSb) superlattice (SL) photodiode structures. We find that the PL efficiency of high-quality structures is determined by Shockley-Read and trap-assisted tunneling nonradiative recombination processes. Our results suggest a possible correlation between trap-assisted tunneling in some SL structures and an anomalous decrease in the PL efficiency with increasing temperature over the range 40-78 K, and provide insight into the effect of defects and SL homogeneity on the PL and transport characteristics of the photodiodes.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2008
Accession Number
ADA486566

Entities

People

  • Jared A. Little
  • K. Olver
  • P. A. Folkes
  • Stefan P. Svensson

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies
  • Sensors

DTIC Thesaurus Topics

  • Antimonides
  • Compound Semiconductors
  • Detectors
  • Diodes
  • Efficiency
  • Electrons
  • Energy Bands
  • Gallium
  • Gallium Antimonides
  • High Density
  • Low Temperature
  • Photodiodes
  • Photoluminescence
  • Quantum Tunneling
  • Semiconductors
  • Superlattices
  • Transport Ships

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Microelectronics