Correlation between Optoelectronic and Structural Properties Epilayer Thickness of AIN

Abstract

AlN epilayers were grown by metal organic chemical vapor deposition on sapphire substrates. X-ray diffraction measurements revealed that the threading dislocation (TD) density, in particular, the edge TD density, decreases considerably with increasing the epilayer thickness. Photoluminescence results showed that the intensity ratio of the band edge emission to the defect related emission increases linearly with increasing the epilayer thickness. Moreover, the dark current of the fabricated AlN metal-semiconductor-metal deep ultraviolet (DUV) photodetectors decreases drastically with the AlN epilayer thickness. The results suggested that one effective way for attaining DUV optoelectronic devices with improved performance is to increase the thickness of the AlN epilayer template, which results in the reduction of the TD density

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 2007
Accession Number
ADA487196

Entities

People

  • B. N. Pantha
  • David Weyburne
  • J. Y. Lin
  • Jiang Li
  • M. L. Nakarmi
  • N. Nepal
  • Quing S. Paduano
  • R. Dahal

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Air Force Research Laboratories
  • Chemical Vapor Deposition
  • Detectors
  • Diffraction
  • Dislocations
  • Emission
  • Metal-Semiconductor-Metal Photodetectors
  • Military Research
  • Optical Properties
  • Optoelectronic Devices
  • Photodetectors
  • Physical Properties
  • Semiconductors
  • Thickness
  • Vapor Deposition
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Mathematics or Statistics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene