Q4 Known Good Substrates
Abstract
The Known Good Substrates (KGS) Phase II program was initiated 29 August 2007. Wafer, epitaxy, modeling and metrology work has been the main focus of efforts in Q4. At the end of the fourth program quarter DCCSS has achieved step change improvements in crystal quality of 76mm diameter 4H n+ SiC crystals as assessed by MPD and HRXRD. Crystals grown in this quarter now exhibit an MPD range of 1-5/sq cm. HR-XRD tests are showing significant reduction of mosaic structure. MPD and mosaic structure now reaching parity with long term suppliers of SiC wafers. In epitaxy, process improvements have reduced epitaxy defect density values to state of the art levels. Device data is now starting to emerge from subcontractors. Record breakdown strength and Vf values are achieved on PiN devices. Vf values are showing strong correlations to high carrier lifetime values measured on epilayers. Program is tracking to achieve most all metrics targets. Challenges remain on improving doping uniformity and reducing wafer resistivity.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 25, 2008
- Accession Number
- ADA487290
Entities
People
- Eric P. Carlson
- Gilyong Chung
- Mark J. Loboda
- Rebecca S. Lauer
Organizations
- Dow Corning