ONR D&I Electronics Technology Programs

Abstract

Program Status: One of the D&I program goals is to develop greatly improved field-plated MMW GaN HEMT devices with high ft/fmax, which will improve gain/PAE and output power of GaN HEMT MMIC PAs simultaneously. The 6-wafer MMW GaN MMIC lot is competed with the front-side processing and waiting for the back-side processing.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Sep 01, 2008
Accession Number
ADA487453

Entities

People

  • Jeong Moon

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Abstracts
  • Availability
  • Bandwidth
  • Buildings And Structures
  • Classification
  • Contracts
  • Electronics
  • Frequency
  • Information Operations
  • Instructions
  • Monitoring
  • Photographs
  • Photography
  • Plastic Explosives
  • Research Facilities
  • Standards

Readers

  • Integrated Circuit Design and Technology.
  • Research Science/Academic Research
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics