In Situ Studies of Defect Nucleation During the PVT and CVD Growth of Silicon Carbide Single Crystals

Abstract

The emphasis in this project was on in situ observation of defect nucleation processes by carrying out CVD homoepitaxial growth of 6H- and 4H-SiC growth in a chamber specially designed to enable synchrotron white beam X-ray topographic (SWBXT) in situ observation of the growing crystal, both bulk and surface regions. In addition a significant amount of ex situ topographic work was carried out on wafers sliced from boules grown in situ in the X-ray beam and boules not grown in situ in the X-ray beam. The growth system was set up using commercially procured gas flow controls and scrubber units, and integrating them with a modified in-house designed growth chamber that has options for in situ X-ray topographic study. The CVD system uses silicon tetrachloride (SiCl4), silane (SiH4), propane (C3H8), hydrogen (H2) and argon (Ar) gases.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2008
Accession Number
ADA487972

Entities

People

  • Michael Dudley

Organizations

  • Stony Brook University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Carbides
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystals
  • Films
  • Flow
  • Gas Flow
  • Hydrogen
  • Hypervelocity Flow
  • Materials
  • Materials Science
  • Nucleation
  • Observation
  • Silicon Carbide
  • Single Crystals
  • X Rays

Readers

  • Combustion science or combustion engineering.
  • Semiconductor Device Technology
  • Thin Film Deposition Science.