Hybrid CMOS/Nanodevice Integrated Circuits Design and Fabrication
Abstract
A promising method for advanced circuitry is the development of hybrid CMOS/nanodevice integrated circuits. This approach combines a semiconductor transistor system with a nanowire crossbar, with simple two-terminal nanodevices self-assembled at each crosspoint. Such a circuit would combine a level of advanced CMOS fabricated by the usual lithographic patterning, and a nanowire crossbar fabricated by an advanced patterning technique, such as Step and Flash Imprint Lithography, a type of ultra violet-based nanoimprinting technology. In this work two distinct arrears were addressed. 32nm dense feature printing, and fabrication and testing of an example crosspoint device. 32nm lines were defined using state of the art variable shape beam pattern generators. Feature fidelity was demonstrated for a variety of different patterns. Reproducibility of two-terminal crosspoint devices was tested using inexpensive metal-oxide-metal (M-Ox-M) junctions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 25, 2008
- Accession Number
- ADA488542
Entities
People
- Douglas Resnick
- Konstantin K. Likharev