S-MMICs: Sub-mm-Wave Transistors and Integrated Circuits
Abstract
Transistor and power amplifier IC technology was developed under UCSB tbr the DARPA SWIFT program. SWIFT seeks to develop sub-mm-wave transistors and ICs to support 340 GHz-band imaging and radar systems. By program end, HBT power-gain cutoff frequencies were increased to 880 GHz, simultaneous with a 5 V breakdown voltage. HBT layer structure designs and process flows, and initial 340 GHz power amplifier designs developed at UCSB were transferred to Teledyne Scientific. Teledyne Scientific then fabricated both transistors and ICs under the financial support of a separate DARPA program; results at TSC include a 2 mW power amplifier at 340 GHz. Device technology development at UCSB included a number of significant accomplishments supporting the future development of sub-mm-wave transistors and integrated circuits, including all-dry-etched processes for reliable formation of ~128 nm feature size transistor emitters and ultra low resistivity contacts for the emitter and base contacts. These several features are critical in enabling transistor bandwidths to extend to the low THz regime.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 2008
- Accession Number
- ADA489869
Entities
People
- Alfred Hung
Organizations
- University of California, Santa Barbara