Normally-off 4H-SiC Trenched Gate MOSFETs with High Mobility (Preprint)

Abstract

A normally-off 4H-SiC trenched gate MOSFET structure with epitaxial buried channel, coupled with improved fabrication processes has resulted in substantially improved channel mobility. Fabricated devices subject to high-temperature ohmic contact rapid thermal annealing at 850 deg. C for 5 min exhibit a peak field-effect mobility (micro(sub FE)) of 95 cm2/Vs at room temperature (25 deg. C) and 255 cm2/Vs at 200 deg. C, which are among the highest reported to date. The dependence of channel mobility and threshold voltage on buried channel depth is investigated to explore the optimum range of channel depth.

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Document Details

Document Type
Technical Report
Publication Date
Feb 28, 2007
Accession Number
ADA491067

Entities

People

  • J. H. Zhao
  • J. Wu
  • Jinyin Hu
  • L. Fursin
  • T. Burke
  • Xiangchong Li
  • Xufeng Wang

Organizations

  • Tank-automotive and Armaments Command

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Abstracts
  • Carbides
  • Compound Semiconductors
  • Electrons
  • Elements
  • Engineering
  • High Temperature
  • Information Operations
  • Metal-Semiconductor Junctions
  • Mobility
  • New Brunswick
  • Silicon
  • Silicon Carbide
  • Universities

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology