Optically-gated Non-latched High Gain Power Device

Abstract

GaAs based optically-triggered power transistor (OTPT) has been developed for fast, repetitive, non-latched switching and control of power semiconductor device (PSD) for power electronics applications. OTPT has been coupled to different PSDs and overall switching dynamics is shown to be controlled by optical intensity modulation. Scalability of this concept over a wide range of PSDs has been demonstrated. Power electronics system level parameters such as power conversion efficiency, dv/dt and di/dt stress on PSD and electromagnetic noise emission spectrum, which depend directly on the switching dynamics of PSD, are also shown to be optically modulated. Experimental validations are presented along with theoretical analyses for each major milestone.

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Document Details

Document Type
Technical Report
Publication Date
Nov 21, 2008
Accession Number
ADA493165

Entities

People

  • Sudip K. Mazumder

Organizations

  • University of Illinois at Chicago

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Dynamics
  • Electron Density
  • Electronics
  • Electronics Industry
  • Electronics Laboratories
  • Field Effect Transistors
  • High Gain
  • Modulation
  • Modules (Electronics)
  • Power Converters
  • Power Electronics
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Switched Mode Power Supplies
  • Transistors

Fields of Study

  • Physics

Readers

  • Atmospheric Science / Meteorology, specifically Wind Wave Turbulence.
  • Electrical Engineering
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics