Tunable, Room Temperature Light-emitting Diodes Based on Strained Si/SiGe Heterostructures

Abstract

This is the report of a project to engineer SiGe/Si heterostructures for a type-I band alignment in which the emission intensity at around 1 micrometer is enhanced over conventional Si-based diodes, and to develop sight-emitting diodes based on the novel type-I SiGe/Si heterostructure.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jan 24, 2009
Accession Number
ADA493566

Entities

People

  • Greg Sun
  • H. H. Cheng
  • Richard Soref

Organizations

  • National Taiwan University

Tags

DTIC Thesaurus Topics

  • Abstracts
  • Diodes
  • Electronic Materials
  • Electronics
  • Emission
  • Engineers
  • Heterojunctions
  • Information Operations
  • Intensity
  • Light Emitting Diodes
  • Materials
  • Semiconductor Devices
  • Semiconductors
  • Solid State Electronics

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology