Modeling of Electroresistive and Magnetoelectric Oxide Heterostructures
Abstract
Using first-principles calculations we have predicted new functional properties of oxide ferroic heterostructures. One class of heterostructures utilizes an ultrathin ferroelectric film serving as a barrier between two metal electrodes which makes a ferroelectric tunnel junction (FTJ). The electric-field-induced polarization reversal of the ferroelectric is predicted to have a profound effect on the conductance of the junction leading to a new kind of electroresistive switches. Another class of devices extends functional properties of the FTJs by replacing normal metal electrodes by ferromagnetic which makes the junctions multiferroic. The interplay between ferroelectric and ferromagnetic properties of the two ferroic constituents affects the spin polarization of the tunneling current. Thus, multiferroic tunnel junctions (MFTJ) may provide a new degree of freedom in functionality of magnetoresistive devices. Also we have explored new possibilities to control the interface magnetization of a magnetic film by an adjacent ferroelectric layer. We have predicted new functional properties of oxide ferroic heterostructures and have explored new possibilities to control the interface magnetization of a magnetic film.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 2008
- Accession Number
- ADA493966
Entities
People
- Evgeny Y Tsymbal
Organizations
- University of Nebraska–Lincoln