III-nitride and Related Wuertzite Quantum-dot-based Optoelectronic Devices with Enhanced Performance
Abstract
The investigators have undertaken several efforts underlying the enhancement of the performance of Ill-nitride and related wuertzite quantum-dot-based optoelectronic devices. These include: carrier scattering by optical phonons; spontaneous polarization in wuertzite; the use of colloidal quantum dots as optoelectronic elements; strain- and confinement-induced shifts in the phonon frequencies in GaN quantum dots; two-phonon processes in photon absorption; phonon effects on carrier transport in nanowires, including wurtzite-based nanowires; and the design of photodetectors using wurtzite-based quantum dots and initial efforts on self-assembly of quantum dots into networks for optoelectronic applications. Eighteen refereed publication (with more in press) and resulted form this program as well as twenty-seven presentations, including seven invited presentations, have resulted form this program to date.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 2009
- Accession Number
- ADA495368
Entities
People
- Michael A. Stroscio
- Mitra Dutta
Organizations
- University of Illinois at Chicago