Terahertz Diode Development

Abstract

The research efforts to develop a high-efficiency, moderate power THz device are discussed. The device structure is based upon the crystalline properties of GaN and its ability to handle large power and high fields. Physical device models were developed that include thermal and electrical simulations. Several device structures were produced in conjunction with the model development Initial negative differential conduction results from fabricated devices are presented as are the designs of co-planar resonant structures suitable for THz/emission.

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Document Details

Document Type
Technical Report
Publication Date
Mar 23, 2009
Accession Number
ADA495426

Entities

People

  • Barbaros Aslan
  • Lester F. Eastman
  • Quentin Diduck

Organizations

  • Cornell University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Electrons
  • Emission
  • Energy Bands
  • Failure Mode And Effect Analysis
  • Gunn Diodes
  • Materials
  • Oscillators
  • Resonant Circuits
  • Semiconductors
  • Simulations
  • Stratified Fluids
  • Terahertz Radiation
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Computational Fluid Dynamics (CFD)
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology