Wavelength Tuning Limitations in Optically Pumped Type-II Antimonide Lasers

Abstract

In this paper, we examine the wavelength tuning limitations of type-II antimonide lasers containing InAs/InGaSb/InAs quantum wells. Wavelength tuning is accomplished by varying the thickness of the InAs electron wells while keeping all else fixed. In principle, these wells can be tuned from lambda approximately equal 2.5 m out to far IR wavelengths by increasing the thickness of the InAs layers. However, a practical upper limit of lambda approximately equal 9.5 micronmeters is set due to the high waveguide losses awg and the diminishing modal overlap with the gain at longer wavelengths. The waveguide losses grow as awg varies as lambda 3.44 and are attributable to free carrier absorbance. In order for the long-IR laser devices to achieve threshold, they must continually band fill, spectrally tuning to shorter wavelengths, until the laser gain exceeds the losses, which occurs near 9.5 micronmeters.

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Document Details

Document Type
Technical Report
Publication Date
Jan 07, 2009
Accession Number
ADA496978

Entities

People

  • A. P. Ongstad
  • G. C. Dente
  • J. R. Chavez
  • M. L. Tilton
  • R. Barresi
  • R. Kaspi

Organizations

  • Air Force Research Laboratory

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Absorption
  • Absorption Spectra
  • Air Force
  • Air Force Research Laboratories
  • Dielectric Waveguides
  • Directed Energy Weapons
  • Infrared Countermeasures
  • Laser Diodes
  • Lasers
  • Long Wavelengths
  • Materials
  • Measurement
  • Quantum Well Lasers
  • Quantum Wells
  • Semiconductor Lasers
  • Semiconductors
  • Spectra

Readers

  • Optical Physics and Photonics.
  • Semiconductor Device Technology
  • Spectroscopy.

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Microelectronics
  • Quantum Computing