Implantation-Free 4H-SiC Bipolar Junction Transistors with Double Base Epi-layers

Abstract

This paper reports the first 4H-SiC power bipolar junction transistor (BJT) which is completely free of ion implantation and hence is free of the implantation-induced crystal damages and high-temperature activation annealing-induced surface roughness. The BJT is designed to have double epitaxial p-type base layers with the top layer more heavily doped for direct Ohmic contact formation while at the same time supporting a robust single-step junction termination extension without the need of ion implantation. The double layers create a built-in electric field in the base region which helps to speed up injected electrons across the base and leads to an improved BJT current gain.

Document Details

• Document Type: Technical Report
• Publication Date: May 14, 2007
• Accession Number: ADA497306

Entities

People

• Jian H. Zhao
• Jianhui Zhang
• Petre Alexandrov
• Terry Burke
• Xueqing Li

Tags

Communities of Interest

• Advanced Electronics

DTIC Thesaurus Topics

• Bipolar Junction Transistors
• Dielectrics
• Electric Fields
• Fabrication
• High Temperature
• Implantation
• Ion Implantation
• Materials
• Materials Science
• Metal-Semiconductor Junctions
• Resistance
• Semiconductor Devices
• Semiconductors
• Silicon Carbide
• Surface Roughness
• Transistors

Readers

• Semiconductor Device Technology

Technology Areas

• Microelectronics
• Microelectronics - Graphene