Theory and Operation of Cold Field-effect Transistor (FET) External Parasitic Parameter Extraction

Abstract

The design of monolithic microwave integrated circuits (MMIC) is dependent on the ability to generate accurate device models. Prior knowledge of the external parasitic components is required to determine the small-signal model of the intrinsic device. In this report, we describe a technique and its implementation for extracting external device parasitics. The term cold field-effect transistor (FET) refers to measurements taken when the drain is at the same voltage as the source.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 2009
Accession Number
ADA499619

Entities

People

  • Benjamin D. Huebschman
  • Pankaj B. Shah
  • Romeo Del Rosario

Organizations

  • United States Army Research Laboratory

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Capacitance
  • Circuits
  • Equivalent Circuits
  • Extraction
  • Field Effect Transistors
  • Frequency
  • High Electron Mobility Transistors
  • Impedance
  • Integrated Circuits
  • Measurement
  • Microwave Integrated Circuits
  • Microwaves
  • Military Research
  • Monolithic Microwave Integrated Circuits
  • Networks
  • Semiconductors
  • Transistors

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design