Materials Design Through Chemical Control of Precursors
Abstract
Our research project that was supported by the Army Research Office sought to develop improved metal-organic film growth precursors for Pb- and Ba-containing materials, lanthanide-containing materials, and semiconductors that contain small clusters of magnetic elements within the semiconductor matrix. These materials encompass a broad range of military and civilian applications, and their successful development will literally change the way we live. More broadly, we sought to develop chemical insight into precursor structures that allowed maximum volatility to be obtained for a desired element-containing molecule, while also matching the growth chemistry of the precursor to that of the desired material. This report describes progress that was made during the project in our precursor development efforts as well as the use of our new precursors in the growth of thin film materials. Specific objectives included: (1) synthesis of volatile precursors to PbxBa1-xTiO3, which should allow the growth of films by MOCVD and of sub-micron sized three-dimensional structures through laser-assisted CVD growth; (2) synthesis of volatile polymetallic Cr, Mn, and other magnetic element precursors that can be used to dope semiconductors with multimetallic magnetic nanoscale structures. Such multimetallic magnetic sites are thought to be responsible for the high magnetic ordering temperatures that have been observed in many magnetic semiconductors such as GaN:Mn; and (3) development of improved volatile lanthanide complexes to be used in the doping of semiconductors.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 22, 2008
- Accession Number
- ADA499822
Entities
People
- Charles H Winter
- Charles L. Dezelah Iv
- Hani M. El Kadri
Organizations
- Wayne State University