Oxide Semiconductors with Non-Volatile Resistance Switching

Abstract

Metal-oxide-metal hetero-structures have been deposited by Pulsed Laser Deposition and sputtering and their I-V and switching characteristics investigated as a function of active oxide layer, top metal electrode type and structure, and oxide thickness. Non-volatile switching has been observed for structures containing (Pr,Ca)Mn03, (La,Ca)Mn03, (La,Sr)Mn03, Sr(Zr,Cr)03 and SrTi03 as the active layer and Mg, Cr, Cu, Ag, and Pt as the top metal. The electrical transport was due to space charge limited current with I + aV + bV(exp 2) and was a function of metal work function (parameter a) and heat of oxide formation (b). The switching was interpreted as due to electric field activated motion of mobile donors in the oxide layers. The I-V characteristics were modeled as using self-consistent approach allowing for donor redistribution as a function of field and chemical potential of the metal electrodes.

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Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2009
Accession Number
ADA500032

Entities

People

  • J. A. Bain
  • M. Skowronski
  • P. A. Salvador

Organizations

  • Carnegie Mellon University

Tags

DTIC Thesaurus Topics

  • Band Gaps
  • Charge Carriers
  • Computational Science
  • Electric Fields
  • Electromagnetic Fields
  • Energy Bands
  • Low Voltage
  • Materials
  • Materials Science
  • Metal Oxides
  • Oxide Films
  • Resistance
  • Semiconductors
  • Space Charge
  • Transport Properties
  • Voltage
  • Work Functions

Fields of Study

  • Materials science

Readers

  • Electrical Engineering
  • Solar Photovoltaics and Thermoelectric Devices.
  • Thin Film Deposition Science.

Technology Areas

  • Directed Energy
  • Directed Energy - Pulsed-Laser Deposition
  • Microelectronics
  • Microelectronics - Graphene
  • Space
  • Space - Hall-Effect Thruster