Study of Spin Splitting in GaN/AlGaN Quantum Wells

Abstract

In the past year, the electronic properties of device-quality InGaN/GaN and AlGaN/GaN quantum wells were investigated by optical and transport measurements. Spin splitting of two-dimensional electron gas in GaN/AlxGa1-xN heterostructures were studied in detail. The result of the investigation can be separated into two parts. One is the study of HEMT made of AlGaN/GaN heterostructures, from the sample growth (by MBE) to the device process (by FIB), to investigate the spintronic device proposed. The other one is the study of GaN nanostructure, for example: GaN nanopillars, pyramids, and disks, grown on LiAlO2 substrate by MBE. All of these results have been published in international journals.

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Document Details

Document Type
Technical Report
Publication Date
May 11, 2009
Accession Number
ADA501416

Entities

People

  • Ikai Lo
  • Jih-chen Chiang

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Electron Microscopes
  • Electron Microscopy
  • Electrons
  • Field Effect Transistors
  • Heterojunctions
  • Materials
  • Measurement
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Nanostructures
  • Optical Properties
  • Quantum Wells
  • Spin-Orbit Interaction
  • Splitting
  • Substrates
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Quantum Computing
  • Quantum Science - Quantum Dots