Effect of Tm3+-Induced Defects on the Photoexcitation Energy Relaxation in Tm-Doped AlxGa1-xN
Abstract
We provide evidence that the Tm3+-induced defects in Tm-doped AlxGa1-xN hosts play a major role in the nonradiative transfer of the excitation energy from the 1I6 state to the 1D2 state of Tm3+ ions from which the most efficient photoluminescence PL transition 465 nm occurs. Once the concentration of the Tm3+-induced defects decreases with increasing x, the PL transitions starting from the 1I6 state 298, 357, 395, 530, and 785 nm may be significantly enhanced. It is shown that the indirect excitation of the 1I6 state results from the Auger-type energy transfer due to the nonradiative band-to-band recombinations in the AlxGa1-xN host of a given x. In contrast, the PL transitions starting from the 1G4 level 479 and 807 nm can be excited through either an indirect or a direct regime. In both cases the 1G4 level is populated by the radiative relaxation of the higher energy excited states 1I6, 3P0, 3P1, and 3P2 of Tm3+ ions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 27, 2009
- Accession Number
- ADA501979
Entities
People
- A. J. Steckl
- D. S. Lee
- H. O. Everitt
- Y. D. Glinka
Organizations
- National Academy of Sciences