Wafer Cleaning and Pre-Bonding Module for Wafer Bonding

Abstract

The EVG 810 system was delivered to UCSB and installed in the new Engineering Sciences cleanroom. The machine was inspected and checked out to insure that it met the designed specifications for bond strength. A number of silicon wafers were bonded with and without activation. As designed, the silicon wafers bonded with an energy of approximately 1.5 J/m2 when activated versus 0.4 J/m2 without activation. The bulk fracture strength of silicon is approximately 2.5 J/m2.

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Document Details

Document Type
Technical Report
Publication Date
Dec 10, 2007
Accession Number
ADA502259

Entities

People

  • Gerald L. Witt
  • Umesh Mishra

Organizations

  • University of California Regents

Tags

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Conduction Bands
  • Department Of Defense
  • Dislocations
  • Engineering
  • Gallium
  • Gallium Nitrides
  • High Temperature
  • Materials
  • Modules (Electronics)
  • Physical Properties
  • Power Electronics
  • Processing Equipment
  • Semiconductor Devices
  • Semiconductors
  • Specifications
  • Standards

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.
  • Software Engineering