Laboratory Instrumentation Design Research for Scalable Next Generation Epitaxy: Non-Equilibrium Wide Application Epitaxial Patterning by Intelligent Control (NEW-EPIC). Volume 1. 3D Composition/Doping Control via Micromiror Patterned Deep UV Photodesorption: Revolutionary in situ Characterization/Control
Abstract
A novel UV-assisted MOMBE system has been developed enabling intense UV irradiation of films during growth. High quality, heavily (unintentionally) carbon-doped GaN is successfully grown by NH3-based MOMBE and for the first time InGaN, AlGaN, and magnesium-doped GaN are demonstrated by NH3-based MOMBE. Intense UV irradiation of films during NH3-based MOMBE significantly enhances photo-desorption of species during the growth process, subsequently affecting the resultant InGaN alloy composition, carbon dopant concentration, or magnesium dopant concentration. A digital micromirror device is introduced to pattern incident UV radiation during InGaN growth, demonstrating that the effects of photoexcitation during MOMBE which have been proposed, discovered, and identified by this work indeed can be leveraged to deposit an InGaN film that is compositionally patterned within the growth plane. The results demonstrate that the new approach presented herein is possible for the 3D Epitaxy (3DE) of III-Nitrides if additional challenges in practical implementation can be overcome.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 19, 2009
- Accession Number
- ADA503475
Entities
People
- A. B. Frazier
- Annabell Selloni
- Daniel Billingsley
- David Pritchett
- S. D. Burnham
- T. H. Myers
- W. Alan Doolittle
- Walter Henderson
Organizations
- Georgia Tech